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3sk41 Datasheet File

Acting as the first stage of amplification.

Given that the 3SK41 is an obsolete component, finding a reliable replacement is common. Here are known substitutes:

): Crucial for stability, this value is exceptionally low (around 0.02 pF to 0.03 pF). This minimal feedback capacitance is what allows the 3SK41 to amplify UHF signals stably without self-oscillating. 5. How the Dual-Gate Structure Works in Circuit Design

Ciss(max)cap C sub i s s open paren m a x close paren end-sub Maximum capacitance seen looking into the gate Anatomy of a Dual-Gate MOSFET

) is kept under 5.0 pF, it causes very little loading on input tuning networks. 3sk41 datasheet

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The following specifications are common for the 3SK41 dual-gate MOSFET: N-channel dual-gate MOS field-effect transistor. Package: Typically found in a CAN-4 (metal can) package.

: Provides various versions of the PDF datasheet from multiple manufacturers.

| Equivalent / Replacement | Type / Package | Key Considerations & Guidance | | :--- | :--- | :--- | | | N-Channel Dual-Gate MOSFET | Common TV tuner ICs; pinout differs, may require board modification; BF998 offers superior noise figure | | 3N201, 3N211 | N-Channel Dual-Gate MOSFET | Popular, common replacements in vintage gear; verify pinout and adapt if necessary | | 3SK40, 3SK45, 3SK48 | N-Channel Dual-Gate MOSFET | Near-identical specs; some tuner servicing guides report success with direct substitution of 3SK48 for 3SK41 | | NTE454 | N-Channel Dual-Gate MOSFET | Modern universal replacement; widely available, but confirm pin compatibility before use | | KP382A (Russian) | N-Channel Dual-Gate MOSFET | Potential replacement from Russian electronics; verify pin configuration matches your circuit | Acting as the first stage of amplification

The is more than just a transistor; it is a snapshot of RF engineering history. Its datasheet reveals a device optimized for stable, high-gain, low-feedback operation in VHF television and radio applications – a true workhorse of its era.

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Understanding the 3SK41 datasheet requires looking at its electrical ratings. Note that these are standard specifications, but minor variations might exist depending on the manufacturer (NEC vs. Hitachi). Approximate Value VDScap V sub cap D cap S end-sub Gate 1-Source Voltage VG1Scap V sub cap G 1 cap S end-sub Gate 2-Source Voltage VG2Scap V sub cap G 2 cap S end-sub Drain Current IDcap I sub cap D 20mA - 30mA Power Dissipation PDcap P sub cap D Forward Transconductance yfsy sub f s end-sub 10mS - 20mS Noise Figure ~ 2dB - 4dB (@ 100MHz) 3. 3SK41 Pinout and Physical Configuration

If you are working on a specific device restoration or circuit design, please let me know: This minimal feedback capacitance is what allows the

The is a legendary dual‑gate N‑Channel MOSFET that was a cornerstone of radio frequency (RF) design in the 1970s and 1980s. Produced primarily by NEC and Toshiba , this small but remarkably capable transistor is still revered by vintage radio and amateur‑radio (ham) enthusiasts for its performance in tuners, RF amplifiers, and mixers. As an obsolete device, the 3SK41 remains in high demand for the repair and restoration of classic communications equipment, such as the Kenwood TS‑520S transceiver and Sansui G‑7500 receiver.

The 3SK40 is reported to have identical DC and RF specifications and is sometimes used as a direct substitute. The 3SK45 is also very similar, but slight differences in gain or capacitance may require minor circuit adjustments. The 3N201 (also known as MFE201 ) has been used successfully by hobbyists, but care is required when selecting a vendor to avoid counterfeit parts.

Although the 3SK41 is no longer in production, its legacy as a high-performance dual-gate MOSFET continues. This guide compiles the scattered but essential information from its unofficial datasheet, detailing its critical role and electrical specifications. As you work on vintage gear, use this resource to identify the device, understand its function, and find suitable modern equivalents for reliable repairs.

– The output terminal where the amplified RF signal or IF signal is extracted.